The FZ1800R12KF4 is a 1.2kV insulated gate bipolar transistor (IGBT) module from Infineon, featuring a maximum collector current of 1.8kA and a maximum operating temperature of 125°C. It has a collector-emitter breakdown voltage of 1.2kV and a collector-emitter saturation voltage of 2.7V. The module is mounted via screw and has a power dissipation of 5kW. It is not RoHS compliant.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 1.8kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Power Dissipation | 5kW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon FZ1800R12KF4 to view detailed technical specifications.
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