The FZ800R12KL4C is a high-power insulated gate bipolar transistor module from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 1.3kA. This module is designed for screw mounting and has a maximum power dissipation of 5kW. The operating temperature range is from -40°C to 125°C, making it suitable for high-temperature applications. The module is not RoHS compliant, and it is available in a package quantity of 2.
PackageModule
MountingScrew
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Technical Specifications
Infineon FZ800R12KL4C technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 38mm |
| Length | 140mm |
| Max Collector Current | 1.3kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 5kW |
| Mount | Screw |
| Package Quantity | 2 |
| RoHS Compliant | No |
| Width | 130mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon FZ800R12KL4C Datasheet
Download the complete datasheet for Infineon FZ800R12KL4C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.