N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a continuous drain current (I(D)) of 150A and a drain-source voltage (V(DS)) of 100V. Offers a low on-resistance (R(DS(on))) of 0.0035 ohms, ensuring efficient power transfer. This single-element device is housed in an 8-pin HSOF-8-1 package, with a single terminal position and two terminals.
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Technical Specifications
Infineon IAUT150N10S5N035ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IAUT150N10S5N035ATMA1 Datasheet
Download the complete datasheet for Infineon IAUT150N10S5N035ATMA1 to view detailed technical specifications.
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