The IDP30E65D2XKSA1 is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a maximum reverse voltage of 650 volts and a maximum power dissipation of 143 milliwatts. The diode is packaged in a TO-220AC package and has a single terminal position. It is a general purpose rectifier diode with a diode element material of silicon.
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Infineon IDP30E65D2XKSA1 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AC |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 650 |
| Power Dissipation-Max | 143 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
