650V Silicon Carbide Rectifier Diode, featuring a single element in a TO-247 package. This Schottky diode offers a maximum operating temperature of 175°C and a minimum of -55°C, with a maximum power dissipation of 112W. Designed for single-phase applications, it boasts three terminals and is constructed from Silicon Carbide for enhanced performance.
Quick Jump:
Technical Specifications
Infineon IDW20G65C5XKSA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| Diode Element Material | SILICON CARBIDE |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 650 |
| Power Dissipation-Max | 112 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IDW20G65C5XKSA1 Datasheet
Download the complete datasheet for Infineon IDW20G65C5XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.