The IGA30N60H3XKSA1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 18A and a maximum power dissipation of 43W. It is packaged in a TO-220-3 package and is lead free and halogen free. The IGBT has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. It is RoHS compliant and available in a rail/tube packaging with 500 units per package.
PackageTO-220-3
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Technical Specifications
Infineon IGA30N60H3XKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 18A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 43W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGA30N60H3XKSA1 Datasheet
Download the complete datasheet for Infineon IGA30N60H3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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