This normally-off 100 V e-mode GaN power transistor is housed in a compact PQFN 3x3 package with dual-side cooling for high power density designs. It is rated for 23 A continuous drain current and 210 A pulsed drain current at 25°C, with typical RDS(on) of 9.4 mΩ and gate charge of 3.4 nC. The device supports reverse conduction, has no reverse recovery charge, and is qualified for industrial use. The exact orderable part is supplied in tape-and-reel packaging with a standard pack of 5000 pieces, and the product is marked RoHS compliant, halogen free, and planned to be available until at least 2035.
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| Transistor Type | Normally-off e-mode GaN power transistor |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) @25°C | 23A |
| Pulsed Drain Current (IDpuls) @25°C | 210A |
| On-Resistance (RDS(on)) typ | 9.4mΩ |
| Total Gate Charge (QG) | 3.4nC |
| Package | PQFN |
| Package Name | PG-TSON-4-2 |
| Body Length | 3.0mm |
| Body Width | 3.0mm |
| Body Thickness | 0.982mm |
| Lead Pitch | 1.1mm |
| Qualification | Industrial |
| Moisture Sensitivity Level | 1 |
| Planned Availability Until At Least | 2035 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
These are design resources that include the Infineon IGB110S10S1
User guide for the EVAL_7126G_100V_GaNc board featuring 100V CoolGaN IGC033S10S1 transistors and 1EDN7126G EiceDRIVER gate drivers in a half-bridge configuration.
