EVAL_7126G_100V_GaNc Half-Bridge Evaluation Board User Guide
User guide for the EVAL_7126G_100V_GaNc board featuring 100V CoolGaN IGC033S10S1 transistors and 1EDN7126G EiceDRIVER gate drivers in a half-bridge configuration.
Overview
This document provides a comprehensive technical overview and feature description for the EVAL_7126G_100V_GaNc evaluation board. The board is designed to evaluate the IGC033S10S1 100 V CoolGaN power transistor and the 1EDN7126G EiceDRIVER TDI gate driver in a half-bridge topology. It supports DC-DC conversion, such as buck or boost modes, and motor drive applications. The guide includes detailed specifications, test setups for double-pulse testing, on-board dead-time generation, and thermal management options. It also provides a reference PCB layout, schematic, bill of materials, and experimental results for efficiency and switching performance under varying conditions.
Use Cases
- DC-DC conversion
- Motor drives
- Consumer electronics
- Robotics
- Energy storage systems
- Renewable energy systems
Topics
Referenced Parts
1EDN7146G
Infineon
Table 3 EiceDRIVER™ 1EDN71x6G family variants: 1EDN7146G
TG-A1780
T-Global
thermal interface material (TIM) pad of T-Global TG-A1780
ERA-2APB2802X
Panasonic
28 kΩ Panasonic ERA-2APB2802X
ERA-2APB473X
Panasonic
47 kΩ Panasonic ERA-2APB473X
IHLP7575-JZ
Vishay
Figure 12 (a) Mounted inductors – TDK ERU series; (b) Vishay IHLP7575-JZ series
IHLP7575JZERER3R3M5A
Vishay
16 Lout 3.3 μH Vishay IHLP7575JZERER3R3M5A
PTN0805E5002BST1
Vishay
20 R3, R4 50 kΩ Vishay PTN0805E5002BST1
| 1EDN7116G | Infineon | Table 3 EiceDRIVER™ 1EDN71x6G family variants: 1EDN7116G |
| 1EDN7126G | Infineon | EiceDRIVER™ 1EDN7126G TDI gate driver |
| 1EDN7136G | Infineon | Table 3 EiceDRIVER™ 1EDN71x6G family variants: 1EDN7136G |
| IGB110S10S1 | Infineon | Alternatively, IGB110S10S1 can also be assembled on the board |
| IGC033S10S1 | Infineon | CoolGaN™ power transistor IGC033S10S1 in a half-bridge configuration |
| 1EDN7126G | Infineon | Infineon 1EDN7126G |
| IGC033S10S1 | Infineon | Infineon IGC033S10S1 |
| C0603C102K3GACTU | Kemet | 1 C1, C2 1 nF Kemet C0603C102K3GACTU |
| GCM188R71E105KA64D | Murata | 2 C3 1 μF Murata GCM188R71E105KA64D |
| GRM155C81E225ME11D | Murata | 11 Cvdd1 2.2 μF Murata GRM155C81E225ME11D |
| GRM188C81E475KE11D | Murata | 6 C8 4.7 μF Murata GRM188C81E475KE11D |
| GRM21BC71E106ME11L | Murata | 4 C6 10 μF Murata GRM21BC71E106ME11L |
| GRM31CC72A475ME11L | Murata | 4.7 μF Murata GRM31CC72A475ME11L |
| GRT155C81E105KE13D | Murata | 5 C7, Cboot 1 μF Murata GRT155C81E105KE13D |
| TSW-103-07-G-T | Samtec | 15 J1 Header Samtec TSW-103-07-G-T |
| HMK107C7224KAHTE | Taiyo Yuden | 220 nF Taiyo Yuden HMK107C7224KAHTE |
| T63YB501KT20 | Vishay | 21 R5, R6 500 Ω Vishay T63YB501KT20 |
| RC0603JR-070RL | Yageo | 23 R8, R9, R20 0 Ω Yageo RC0603JR-070RL |
| MCP9701AT-E/TT | Microchip | 39 U5 MCP9701AT-E/TT Microchip Technology MCP9701AT-E/TT |
| 1EDN7146G | Infineon | Table 3 EiceDRIVER™ 1EDN71x6G family variants: 1EDN7146G |
| TG-A1780 | T-Global | thermal interface material (TIM) pad of T-Global TG-A1780 |
| ERA-2APB2802X | Panasonic | 28 kΩ Panasonic ERA-2APB2802X |
| ERA-2APB473X | Panasonic | 47 kΩ Panasonic ERA-2APB473X |
| IHLP7575-JZ | Vishay | Figure 12 (a) Mounted inductors – TDK ERU series; (b) Vishay IHLP7575-JZ series |
| IHLP7575JZERER3R3M5A | Vishay | 16 Lout 3.3 μH Vishay IHLP7575JZERER3R3M5A |
| PTN0805E5002BST1 | Vishay | 20 R3, R4 50 kΩ Vishay PTN0805E5002BST1 |