The IGB20N60H3ATMA1 is a 600V insulated gate bipolar transistor from Infineon, packaged in a TO-263-3 case. It features a maximum collector current of 40A and a maximum power dissipation of 170W. The device is RoHS compliant and halogen free, with a maximum operating temperature of 175°C and a minimum operating temperature of -40°C.
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Infineon IGB20N60H3ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 170W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 170W |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
No datasheet is available for this part.
