The IGB50N60TATMA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 100A. It features a TO-263-3 package and is designed for high-power applications. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. It is RoHS compliant and halogen free, making it suitable for environmentally friendly designs. The IGB50N60TATMA1 is part of the TrenchStop series from Infineon.
PackageTO-263-3
Power333W
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Technical Specifications
Infineon IGB50N60TATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 333W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 333W |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGB50N60TATMA1 Datasheet
Download the complete datasheet for Infineon IGB50N60TATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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