The IGD01N120H2BUMA1 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 3.2A. It is packaged in a TO-252-3 package and has a maximum power dissipation of 28W. The transistor operates within a temperature range of -40°C to 150°C. It is compliant with RoHS regulations and is available in quantities of 2500 per reel.
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Infineon IGD01N120H2BUMA1 technical specifications.
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 3.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 28W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 28W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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