The IGP06N60TXKSA1 is a TO-220 flange mount insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 600V and a maximum collector current of 12A. It operates within a temperature range of -40°C to 175°C and has a maximum power dissipation of 88W. The device is lead-free and halogen-free, and is compliant with RoHS regulations. It is packaged in a rail/Tube format and is suitable for through-hole mounting.
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Infineon IGP06N60TXKSA1 technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGP06N60TXKSA1 to view detailed technical specifications.
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