The IGP30N65H5XKSA1 is a TO-220 insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 650V and a maximum collector current of 55A. It has a maximum power dissipation of 188W and is lead free and halogen free. The transistor is packaged in a TO-220 package and is available in quantities of 500. It is compliant with RoHS regulations and is suitable for use in a variety of applications.
PackageTO-220
MountingThrough Hole
Power188W
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Technical Specifications
Infineon IGP30N65H5XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 55A |
| Max Power Dissipation | 188W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 188W |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGP30N65H5XKSA1 Datasheet
Download the complete datasheet for Infineon IGP30N65H5XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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