This enhancement-mode GaN power transistor is rated for 650 V operation and is intended for industrial switching applications. It provides up to 49 A continuous drain current at 25°C, 97 A pulsed drain current, 35 mΩ typical RDS(on), 42 mΩ maximum RDS(on), and 7.7 nC gate charge. The device is housed in a bottom-side cooled TOLL package and is designed for high-frequency operation with ultrafast switching, reverse conduction capability, and no reverse-recovery charge. It is qualified for industrial use, is RoHS compliant and halogen free, and is planned to be available until at least 2035.
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| Technology | GaN power transistor |
| Mode | Enhancement mode |
| Drain-Source Voltage Max | 650V |
| Continuous Drain Current @25°C Max | 49A |
| Pulsed Drain Current @25°C Max | 97A |
| RDS(on) Typ | 35mΩ |
| RDS(on) Max | 42mΩ |
| Total Gate Charge | 7.7nC |
| Package | TOLL |
| Qualification | Industrial |
| Planned Availability Until At Least | 2035 |
| ESD HBM | 2kV |
| ESD CDM | 1kV |
| RoHS | Compliant |
| Halogen Free | Yes |
These are design resources that include the Infineon IGT65R035D2
Application note for a 3.3 kW PSU (REF_3K3W_HFHD_PSU) with 98 W/inch³ power density, utilizing interleaved totem-pole PFC and GaN-based LLC stages for server applications.
