The IGU04N60TAKMA1 is an insulated gate bipolar transistor from Infineon, featuring a collector-emitter breakdown voltage of 600V and a maximum collector current of 8A. It is packaged in a TO-251 case and is designed for through-hole mounting. The device is rated for operation between -40°C and 175°C and has a maximum power dissipation of 42W. The IGU04N60TAKMA1 is compliant with RoHS regulations and is available in rail or tube packaging.
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Infineon IGU04N60TAKMA1 technical specifications.
| Package/Case | TO-251 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGU04N60TAKMA1 to view detailed technical specifications.
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