The IGW15N120H3 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 30A and a maximum operating temperature of 175°C. It is packaged in a TO-247-3 flange mount package. The device is RoHS compliant and not halogen free. It is designed for use in high-power applications and has a maximum power dissipation of 217W. The transistor is available in a rail or tube packaging configuration.
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Infineon IGW15N120H3 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.4V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 217W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGW15N120H3 to view detailed technical specifications.
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