The IGW15N120H3FKSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 30A. It is packaged in a TO-247 flange mount and is designed for through hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. It is lead free and RoHS compliant, but not halogen free. The IGW15N120H3FKSA1 is suitable for use in a variety of applications, including those requiring high power dissipation of up to 217W.
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Infineon IGW15N120H3FKSA1 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 217W |
| Mount | Through Hole |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGW15N120H3FKSA1 to view detailed technical specifications.
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