N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-voltage applications. Features a maximum operating voltage of 1200V and a continuous collector current of 50A. This 3-pin device, housed in a TO-247 package, offers a maximum power dissipation of 326000mW and operates up to 175°C.
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Technical Specifications
Infineon IGW25N120H3FKSA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IGW25N120H3FKSA1 Datasheet
Download the complete datasheet for Infineon IGW25N120H3FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.