The IGW25T120FKSA1 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 50A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device is lead-free and RoHS compliant. The operating temperature range is -40°C to 150°C, with a maximum power dissipation of 190W.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IGW25T120FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGW25T120FKSA1 Datasheet
Download the complete datasheet for Infineon IGW25T120FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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