The IGW30N100TFKSA1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1kV and a maximum collector-emitter voltage of 1.9V. It can handle a maximum collector current of 60A and a maximum power dissipation of 412W. The transistor is packaged in a TO-247-3 case and is lead free and RoHS compliant. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.
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Infineon IGW30N100TFKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 1.9V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 412W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGW30N100TFKSA1 to view detailed technical specifications.
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