N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V breakdown voltage and a continuous collector current of 45A. Housed in a 3-pin TO-247 package with a single terminal position. Operates across a wide temperature range from -40°C to 150°C.
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Technical Specifications
Infineon IGW30N60TPXKSA1 technical specifications.
General
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IGW30N60TPXKSA1 Datasheet
Download the complete datasheet for Infineon IGW30N60TPXKSA1 to view detailed technical specifications.
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