N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V breakdown voltage and a continuous collector current of 45A. Housed in a 3-pin TO-247 package with a single terminal position. Operates across a wide temperature range from -40°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IGW30N60TPXKSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IGW30N60TPXKSA1 technical specifications.
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IGW30N60TPXKSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
