N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 1200V breakdown voltage and 80A continuous collector current. Offers a maximum operating temperature of 175°C. Packaged in a TO-247 JEDEC code with 3 terminals, including a tab for enhanced thermal dissipation.
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Technical Specifications
Infineon IGW40N120H3FKSA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IGW40N120H3FKSA1 Datasheet
Download the complete datasheet for Infineon IGW40N120H3FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.