The IGW40T120 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 75A and a maximum power dissipation of 270W. It is packaged in a TO-247-3 flange mount package and has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The device is lead free and RoHS compliant, but not halogen free or radiation hardened. It is suitable for use in high-power applications where a high current and high voltage are required.
PackageTO-247-3
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Technical Specifications
Infineon IGW40T120 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.3V |
| Halogen Free | Not Halogen Free |
| Height | 5.21mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 270W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| Width | 21.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGW40T120 Datasheet
Download the complete datasheet for Infineon IGW40T120 to view detailed technical specifications.
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