The IGT60N60H3FKSA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 100A and maximum power dissipation of 333W. It is packaged in a TO-247-3 flange mount package, with a width of 5.21mm, length of 16.13mm, and height of 21.1mm. The transistor operates within a temperature range of -40°C to 175°C and is compliant with RoHS regulations. It is part of the TrenchStop series from Infineon.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IGW50N60H3FKSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IGW50N60H3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Halogen Free | Not Halogen Free |
| Height | 21.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 333W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 5.21mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGW50N60H3FKSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
