The IGW50N65H5 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 650V and a maximum collector current of 80A. It is packaged in a TO-247-3 case and is suitable for operation in temperatures ranging from -40°C to 175°C. The device is compliant with RoHS regulations and is available in rail or tube packaging.
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Infineon IGW50N65H5 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 1.65V |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 305W |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
