The IGW60N60H3FKSA1 is a 600V insulated gate bipolar transistor from Infineon, featuring a maximum collector current of 80A and a maximum operating temperature of 175°C. It is packaged in a TO-247 flange mount package and is lead free and RoHS compliant. The transistor has a maximum power dissipation of 416W and a minimum operating temperature of -40°C. It is suitable for high-power applications and is available in a rail/tube packaging option.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IGW60N60H3FKSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IGW60N60H3FKSA1 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IGW60N60H3FKSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
