N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Voltage (V(BR)CES) and a continuous Collector Current (I(C)) of 100A. Packaged in a TO-247AD through-hole mount configuration, this device operates within a temperature range of -40°C to 150°C. It is RoHS compliant and lead-free, supplied in rail/tube packaging.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IGW60T120FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Halogen Free | Not Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IGW60T120FKSA1 Datasheet
Download the complete datasheet for Infineon IGW60T120FKSA1 to view detailed technical specifications.
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