The IHW20N120R3FKSA1 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 40A and a maximum power dissipation of 310W. It is packaged in a TO-247-3 plastic package and is designed for through-hole mounting. The IGBT operates within a temperature range of -40°C to 175°C and is compliant with RoHS regulations.
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Infineon IHW20N120R3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IHW20N120R3FKSA1 to view detailed technical specifications.
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