The IHW20N135R5XKSA1 is an insulated gate bipolar transistor (IGBT) from Infineon, packaged in a TO-247 case and designed for through-hole mounting. It features a collector-emitter breakdown voltage of 1.35kV and a maximum collector current of 40A. The device is compliant with RoHS regulations and is halogen-free. It operates within a temperature range of -40°C to 175°C and has a maximum power dissipation of 288W.
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Infineon IHW20N135R5XKSA1 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.35kV |
| Collector Emitter Voltage (VCEO) | 1.35kV |
| Collector-emitter Voltage-Max | 1.85V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 288W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 288W |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IHW20N135R5XKSA1 to view detailed technical specifications.
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