The IHW30N110R3FKSA1 is a 1.1kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 60A and a maximum power dissipation of 333W. It is packaged in a TO-247-3 flange mount package and is compliant with RoHS regulations. The IGBT has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. It is available in a rail/tube packaging format with 240 units per package.
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Infineon IHW30N110R3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.1kV |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector Emitter Voltage (VCEO) | 1.1kV |
| Collector-emitter Voltage-Max | 1.75V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 1.1kV |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 333W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 333W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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