Infineon
IHW30N110R3FKSA1
Insulated Gate Bipolar Transistor, 60A I(C), 1100V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
PackageTO-247-3
Power333W
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Technical Specifications
Infineon IHW30N110R3FKSA1 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.1kV
Collector Emitter Saturation Voltage
1.55V
Collector Emitter Voltage (VCEO)
1.1kV
Collector-emitter Voltage-Max
1.75V
Halogen Free
Halogen Free
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
1.1kV
Max Collector Current
60A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
333W
Package Quantity
240
Packaging
Rail/Tube
Power Dissipation
333W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon IHW30N110R3FKSA1 Datasheet
Download the complete datasheet for Infineon IHW30N110R3FKSA1 to view detailed technical specifications.
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