The IHW40N120R3FKSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 80A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device is lead-free and RoHS compliant, with a maximum operating temperature of 175°C and a minimum operating temperature of -40°C. The IHW40N120R3FKSA1 is suitable for high-power applications.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Infineon IHW40N120R3FKSA1 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.75V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 429W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IHW40N120R3FKSA1 Datasheet
Download the complete datasheet for Infineon IHW40N120R3FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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