N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 14.7A Continuous Collector Current. This device offers a low 1.5V Collector Emitter Saturation Voltage and a maximum operating temperature of 175°C. Packaged in a TO-220-3 full pack, it is RoHS compliant and Halogen Free. Key switching characteristics include a 17ns Turn-On Delay Time and 188ns Turn-Off Delay Time.
PackageTO-220-3
Power35.7W
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Technical Specifications
Infineon IKA15N60TXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Continuous Collector Current | 18.3A |
| Halogen Free | Halogen Free |
| Height | 19.546mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 14.7A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 35.7W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 35.7W |
| Radiation Hardening | No |
| Reverse Recovery Time | 34ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Turn-Off Delay Time | 188ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKA15N60TXKSA1 Datasheet
Download the complete datasheet for Infineon IKA15N60TXKSA1 to view detailed technical specifications.
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