N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 14.7A Continuous Collector Current. This device offers a low 1.5V Collector Emitter Saturation Voltage and a maximum operating temperature of 175°C. Packaged in a TO-220-3 full pack, it is RoHS compliant and Halogen Free. Key switching characteristics include a 17ns Turn-On Delay Time and 188ns Turn-Off Delay Time.
PackageTO-220-3
Power35.7W
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Technical Specifications
Infineon IKA15N60TXKSA1 technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.05V
Continuous Collector Current
18.3A
Halogen Free
Halogen Free
Height
19.546mm
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
14.7A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
35.7W
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
35.7W
Radiation Hardening
No
Reverse Recovery Time
34ns
RoHS Compliant
Yes
Series
TrenchStop®
Turn-Off Delay Time
188ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Infineon IKA15N60TXKSA1 Datasheet
Download the complete datasheet for Infineon IKA15N60TXKSA1 to view detailed technical specifications.
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