The IKD04N60RAATMA1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 8A and a maximum power dissipation of 75W. It is packaged in a TO-252-3 surface mount package and is suitable for operating temperatures between -40°C and 175°C. The device is compliant with RoHS regulations and is halogen-free. It features a reverse recovery time of 43ns and is suitable for use in a variety of applications including power conversion and motor control.
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Infineon IKD04N60RAATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Reverse Recovery Time | 43ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
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