N-channel Insulated Gate Bipolar Transistor (IGBT) chip for automotive applications. Features 600V collector-emitter voltage and 20A continuous collector current. Surface-mount DPAK package (TO-252AA) with 3 pins and a tab, offering a maximum power dissipation of 150,000mW. Operating temperature range from -40°C to 175°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon IKD10N60RF technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.41(Max) |
| Seated Plane Height (mm) | 2.56(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 20A |
| Maximum Power Dissipation | 150000mW |
| Typical Collector Emitter Saturation Voltage | 2.2V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IKD10N60RF Datasheet
Download the complete datasheet for Infineon IKD10N60RF to view detailed technical specifications.
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