The IKP08N65H5 is an insulated gate bipolar transistor from Infineon with a collector emitter breakdown voltage of 650V and a maximum power dissipation of 70W. It is packaged in a TO-220-3 case and is halogen free. The device is RoHS compliant and has a maximum operating temperature of 175°C and a minimum operating temperature of -40°C.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 1.65V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 70W |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| RoHS | Compliant |
