The IKP08N65H5XKSA1 is an insulated gate bipolar transistor from Infineon, packaged in a TO-220 case and designed for through-hole mounting. It has a collector-emitter breakdown voltage of 650V and a saturation voltage of 1.65V. The transistor can handle a maximum collector current of 18A and a maximum power dissipation of 70W. It operates over a temperature range of -40°C to 175°C and is compliant with RoHS regulations. The transistor is halogen-free and lead-free.
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| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Collector Current | 18A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Weight | 0.211644oz |
| Width | 4.57mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKP08N65H5XKSA1 to view detailed technical specifications.
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