N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 20A. This device offers a low Collector Emitter Saturation Voltage of 2.05V and a maximum power dissipation of 110W. Operating across a temperature range of -40°C to 175°C, it is housed in a TO-220-3 package. The component is RoHS compliant and halogen-free.
PackageTO-220-3
Power110W
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Technical Specifications
Infineon IKP10N60TXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 110W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 115ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKP10N60TXKSA1 Datasheet
Download the complete datasheet for Infineon IKP10N60TXKSA1 to view detailed technical specifications.
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