The IKP15N65H5XKSA1 is a 650V insulated gate bipolar transistor (IGBT) with a maximum collector current of 30A. It features a TO-220 package and is designed for through hole mounting. The device operates over a temperature range of -40°C to 175°C and is compliant with RoHS regulations. The IGBT has a maximum power dissipation of 105W and a reverse recovery time of 48ns.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IKP15N65H5XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 105W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 48ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKP15N65H5XKSA1 Datasheet
Download the complete datasheet for Infineon IKP15N65H5XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.