The IKP20N60H3XKSA1 is a 600V insulated gate bipolar transistor from Infineon, packaged in a TO-220 flange mount with a maximum collector current of 40A and maximum power dissipation of 170W. It has a collector-emitter breakdown voltage of 600V and a saturation voltage of 1.95V. The transistor is halogen free and lead free, and is compliant with RoHS standards. It operates over a temperature range of -40°C to 175°C.
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Infineon IKP20N60H3XKSA1 technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Power Dissipation | 170W |
| Reverse Recovery Time | 112ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKP20N60H3XKSA1 to view detailed technical specifications.
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