N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 1200V breakdown voltage and a continuous collector current of 150A. Offers a high power dissipation of 880,000mW. Packaged in a 3-pin (3+Tab) TO-247 configuration for efficient thermal management.
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| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
