N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum Collector Current of 40A. This device offers a low Collector Emitter Saturation Voltage of 1.95V and a maximum power dissipation of 170W. Packaged in a TO-247-3 plastic package, it operates within a temperature range of -40°C to 175°C. RoHS compliant and lead-free, this IGBT is suitable for demanding applications.
PackageTO-247-3
Power170W
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Technical Specifications
Infineon IKW20N60H3FKSA1 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.95V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Halogen Free
Not Halogen Free
Height
21.1mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.13mm
Max Breakdown Voltage
600V
Max Collector Current
40A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
170W
Package Quantity
240
Packaging
Rail/Tube
Power Dissipation
170W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
112ns
RoHS Compliant
Yes
Series
TrenchStop®
Width
5.21mm
Compliance
RoHS
Compliant
Datasheet
Infineon IKW20N60H3FKSA1 Datasheet
Download the complete datasheet for Infineon IKW20N60H3FKSA1 to view detailed technical specifications.
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