N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum Collector Current of 40A. This device offers a low Collector Emitter Saturation Voltage of 1.95V and a maximum power dissipation of 170W. Packaged in a TO-247-3 plastic package, it operates within a temperature range of -40°C to 175°C. RoHS compliant and lead-free, this IGBT is suitable for demanding applications.
PackageTO-247-3
Power170W
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Technical Specifications
Infineon IKW20N60H3FKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.95V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Halogen Free | Not Halogen Free |
| Height | 21.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 170W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 112ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IKW20N60H3FKSA1 Datasheet
Download the complete datasheet for Infineon IKW20N60H3FKSA1 to view detailed technical specifications.
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