The IKW20N60TFKSA1 is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It features a TO-247-3 package and is designed for high-power applications. The device operates over a temperature range of -40°C to 175°C and is compliant with RoHS and Reach SVHC regulations. With a maximum power dissipation of 166W, this IGBT is suitable for demanding power conversion and control applications.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 166W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | Yes |
| Reverse Recovery Time | 41ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKW20N60TFKSA1 to view detailed technical specifications.
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