The IKW40N120H3 is a 1200V insulated gate bipolar transistor (IGBT) with a maximum collector current of 80A. It features a TO-247-3 package and is designed for flange mount applications. The device has a maximum power dissipation of 483W and operates within a temperature range of -40°C to 175°C. The IKW40N120H3 is compliant with RoHS regulations and is available in a rail/Tube packaging configuration.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.4V |
| Height | 21.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.03mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 483W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 483W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 355ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| Width | 5.16mm |
| RoHS | Compliant |
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