The IKW40N120T2 is a high-power insulated gate bipolar transistor (IGBT) from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 75A. It has a maximum power dissipation of 480W and is packaged in a TO-247-3 flange mount configuration. The device operates within a temperature range of -40°C to 175°C and is compliant with RoHS regulations. The IGBT is part of the TrenchStop series and is available in quantities of 240 per rail/tube packaging.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 480W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 258ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKW40N120T2 to view detailed technical specifications.
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