High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V collector-emitter breakdown voltage and a maximum collector current of 74A. This through-hole component, housed in a TO-247 package, offers a low collector-emitter saturation voltage of 1.6V and a maximum power dissipation of 255W. Designed for demanding applications, it operates across a wide temperature range from -40°C to 175°C, with fast switching characteristics including a 19ns turn-on delay and 160ns turn-off delay. This RoHS compliant device is suitable for power electronics circuits requiring robust performance and reliability.
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Infineon IKW40N65F5FKSA1 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Continuous Collector Current | 74A |
| Halogen Free | Not Halogen Free |
| Height | 25.5mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 74A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 255W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 255W |
| Reach SVHC Compliant | Unknown |
| Reverse Recovery Time | 60ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
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