High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V collector-emitter breakdown voltage and a maximum collector current of 74A. This through-hole component, housed in a TO-247 package, offers a low collector-emitter saturation voltage of 1.6V and a maximum power dissipation of 255W. Designed for demanding applications, it operates across a wide temperature range from -40°C to 175°C, with fast switching characteristics including a 19ns turn-on delay and 160ns turn-off delay. This RoHS compliant device is suitable for power electronics circuits requiring robust performance and reliability.
PackageTO-247
MountingThrough Hole
Power255W
Quick Jump:
Technical Specifications
Infineon IKW40N65F5FKSA1 technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.6V
Collector Emitter Voltage (VCEO)
650V
Collector-emitter Voltage-Max
2.1V
Continuous Collector Current
74A
Halogen Free
Not Halogen Free
Height
25.5mm
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
74A
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
255W
Mount
Through Hole
Package Quantity
240
Packaging
Rail/Tube
Power Dissipation
255W
Reach SVHC Compliant
Unknown
Reverse Recovery Time
60ns
RoHS Compliant
Yes
Series
TrenchStop®
Turn-Off Delay Time
160ns
Turn-On Delay Time
19ns
Compliance
RoHS
Compliant
Datasheet
Infineon IKW40N65F5FKSA1 Datasheet
Download the complete datasheet for Infineon IKW40N65F5FKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.