The IKW50N60H3FKSA1 is a 600V insulated gate bipolar transistor from Infineon, featuring a TO-247-3 package and a maximum collector current of 100A. It operates within a temperature range of -40°C to 175°C and has a maximum power dissipation of 333W. The device is lead free and halogen free, and complies with RoHS and Reach SVHC regulations.
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Infineon IKW50N60H3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Halogen Free | Halogen Free |
| Height | 21.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 100A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 333W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Reverse Recovery Time | 130ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Width | 5.21mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKW50N60H3FKSA1 to view detailed technical specifications.
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