The IKW50N65F5FKSA1 is an insulated gate bipolar transistor (IGBT) from Infineon, featuring a collector-emitter breakdown voltage of 650V and a maximum collector current of 80A. It has a maximum power dissipation of 305W and is packaged in a TO-247 case, suitable for through-hole mounting. The IGBT operates within a temperature range of -40°C to 175°C and is compliant with RoHS regulations. It is part of the TrenchStop series and is not halogen-free.
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Infineon IKW50N65F5FKSA1 technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.1V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 305W |
| Mount | Through Hole |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Power Dissipation | 305W |
| Radiation Hardening | No |
| Reverse Recovery Time | 52ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| RoHS | Compliant |
Download the complete datasheet for Infineon IKW50N65F5FKSA1 to view detailed technical specifications.
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