The IKW60N60H3FKSA1 is a flange mount insulated gate bipolar transistor with a TO-247-3 package and through hole mount. It has a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. The transistor can dissipate a maximum power of 416W. It is compliant with RoHS regulations and has a reverse recovery time of 143ns.
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Infineon IKW60N60H3FKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Input Type | STANDARD |
| Max Collector Current | 80A |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 143ns |
| RoHS Compliant | Yes |
| Series | TrenchStop™ |
| RoHS | Compliant |
No datasheet is available for this part.
