N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a continuous collector current of 80A. Offers a low collector-emitter saturation voltage of 1.5V and a maximum power dissipation of 428W. Packaged in a TO-247-3 configuration, this RoHS compliant component operates within a temperature range of -40°C to 175°C.
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Infineon IKW75N60TFKSA1 technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 80A |
| Height | 21.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.03mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 428W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 121ns |
| RoHS Compliant | Yes |
| Series | TrenchStop® |
| Weight | 1.340411oz |
| Width | 5.16mm |
| RoHS | Compliant |
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