The IL207AT diode features a collector base voltage of 70V and a collector emitter voltage of 70V. It has a power dissipation of 90mW and an isolation voltage of 3kV. The device is available in a SOIC package and operates over a temperature range of -55°C to 100°C.
PackageSOIC
Capacitance13pF
Power90mW
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Technical Specifications
Infineon IL207AT technical specifications.
General
| Capacitance | 13pF |
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Isolation Voltage | 3kV |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Power Dissipation | 90mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IL207AT Datasheet
Download the complete datasheet for Infineon IL207AT to view detailed technical specifications.
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